specification subject to change without notice m-pulse microwave____________________________________________________________________________________ 1 576 charcot avemue, san jose, california 95131 tel (408) 432-1480 fax (408)) 432-3440 silicon bipolar high f t low noise microwave transistors mp4t645 features f t to 9 ghz low noise figure high associated gain hermetic and surface mount packages available can be screened to jantx, jantxv equivalent levels industry standard description the mp4t645 family of high gain-bandwidth, small signal silicon bipolar transistors is well suited for use in amplifiers to approximately 4 ghz, and in oscillators to approximately 10 ghz. these industry standard transis- tors freature low noise figure at high collector current, which produces very good associated gain and wide dynamic range. the mp4t645 series transistors are available in a hermetic microstrip package (mp4t64535), in the plastic sot-23 package (MP4T64533), in chip form (mp4t64500), and in the sot-143 package (mp4t64539). the mp4t645 series is available in other plastic and hermetic packages as well. the chip and hermetically packaged transistors can be screened to a jantxv equivalent level. applications the mp4t645 family of bipolar npn transistors can be used for low noise, high associated gain. large dynamic range amplifiers up to approximately 4 ghz. these transistors can also be used as preamplifier or driver stages in the same frequency range. the mp4t645 family of bipolar npn transistors can also be used for oscillators or vcos up to approximately 10 ghz. the passivation consists of silicon dioxide, commonly known as thermal oxide, and silicon nitride to produce very low 1/f noise in both amplifiers and oscillators. case styles sot-23 sot-143 chip micro-x
silicon bipolar high f t low noise microwave transistors mp4t645 series specification subject to change without notice m-pulse microwave____________________________________________________________________________________ 2 576 charcot avemue, san jose, california 95131 tel (408) 432-1480 fax (408)) 432-3440 absolute maximum ratings mp4t645 series collector-base voltage v cbo 25 v collector-emitter voltage v ceo 12 v emitter-base voltage v ebo 1.5 v collector current i c 65 ma junction operating temperature t j 200 c storage temperature chip or ceramic packages -65 c to +200 c plastic packages -65 c to +125 c total power dissipation at 25 c derate linearly to: +150 c chip 400 mw +125 c plastic package (sot-23) 200 mw +150 c ceramic package (micro-x) 300 mw electrical specifications @ 25 c mp4t645 series parameter of test condition symbol units mp4t64500 chip mp4t64535 sot-23 MP4T64533 micro-x gain bandwidth product v ce = 8 volts f t ghz 10 typ 8 typ 9 typ i c = 20 ma insertion power gain v ce = 8 volts |s 21e | 2 db i c = 20 ma f = 1 ghz 18 typ 16 typ 17 typ f = 2 ghz 11 min 10 min 10 min f = 4 ghz 7 typ 6.5 typ noise figure v ce = 8 volts nf db i c = 7 ma f = 1 ghz 1.7 max 1.7 max 1.7 max f = 2 ghz 2.0 typ 2.5 typ 2.0 typ unilateral gain v ce = 8 volts gtu (max) db i c = 7 ma f = 1 ghz 18 typ 16 typ 17 typ f = 2 ghz 11 typ 10 typ 11 typ maximum available gain v ce = 8 volts mag db i c = 10 ma f = 2 ghz 14 typ 13 typ 14 typ f = 4 ghz 12 typ 10 typ 11.5 typ power out at 1 db v ce = 8 volts p 1db dbm compression i c = 10 ma f = 1 ghz 16 typ 16 typ 16 typ f = 4 ghz 11 typ 11 typ 11 typ note: the electrical characteristics of the mp4t64539 (sot-143) are very similar to those of the MP4T64533 (sot-23).
silicon bipolar high f t low noise microwave transistors mp4t645 series specification subject to change without notice m-pulse microwave____________________________________________________________________________________ 3 576 charcot avemue, san jose, california 95131 tel (408) 432-1480 fax (408)) 432-3440 electrical specifications @ 25 c mp4t645 series parameter condition symbol min typical max units collector cut-off current v cb = 8 volts i cbo ? ? 100 na i e = 0 m a emitter cut-off current v eb = 1 volt i ebo ? ? 1 m a i c = 0 m a forward current gain v ce = 8 volts h fe 30 125 250 ? i c = 7 ma collector-base v cb = 10 volts c co ? 0.3 0.6 pf junction capacitance i e = 0 m a f = 1 mhz typical scattering parameters in the micro-x package mp4t64535, v ce = 8 volts, i c = 7 ma frequency s 11e s 21e s 12e s 22e (mhz) mag. angle mag. angle mag. angle mag angle 500 0.583 -114 9.315 116.1 0.052 43.6 0.573 -42.6 1000 0.569 -153 5.399 94.7 0.063 39.0 0.406 -53.0 1500 0.573 -173 3.807 82.0 0.072 40.0 0.357 -57.1 2000 0.587 170 2.980 72.0 0.082 42.5 0.313 -61.8 2500 0.598 159 2.479 62.7 0.092 44.0 0.299 -71.7 3000 0.616 150 2.132 54.8 0.103 45.2 0.304 -78.5 3500 0.645 142 1.935 47.0 0.118 45.5 0.289 -86.5 4000 0.675 132 1.782 38.5 0.130 45.7 0.281 -96.6 4500 0.705 124 1.631 29.6 0.143 45.5 0.292 -105.5 5000 0.749 115 1.538 22.0 0.159 44.5 0.281 -114.1 5500 0.791 106 1.445 14.4 0.176 43.6 0.283 -125.7 6000 0.832 96 1.395 6.1 0.188 42.3 0.306 -135.0 mp4t64535, v ce = 8 volts, i c = 10 ma frequency s 11e s 21e s 12e s 22e (mhz) mag. angle mag. angle mag. angle mag angle 500 0.562 -128 10.477 111.9 0.044 44.5 0.515 -46.2 1000 0.564 -161 5.845 92.1 0.056 44.0 0.358 -53.8 1500 0.575 176 4.088 80.5 0.068 46.5 0.313 -57.2 2000 0.592 166 3.185 70.9 0.080 49.0 0.276 -62.3 2500 0.601 156 2.638 62.0 0.092 49.7 0.268 -71.7 3000 0.618 148 2.266 54.5 0.105 50.1 0.272 -78.3 3500 0.648 139 2.053 46.9 0.122 49.4 0.259 -87.0 4000 0.677 130 1.892 38.6 0.136 48.7 0.253 -96.9 4500 0.706 122 1.734 29.8 0.150 47.9 0.264 -106.0 5000 0.749 113 1.634 22.3 0.167 46.1 0.257 -115.1 5500 0.790 104 1.532 14.8 0.184 44.4 0.259 -126.3 6000 0.831 95 1.482 6.4 0.196 42.6 0.278 -136.0
silicon bipolar high f t low noise microwave transistors mp4t645 series specification subject to change without notice m-pulse microwave____________________________________________________________________________________ 4 576 charcot avemue, san jose, california 95131 tel (408) 432-1480 fax (408)) 432-3440 typical scattering parameters in the micro-x package (cont?d) mp4t64535, v ce = 8 volts, i c = 20 ma frequency s 11e s 21e s 12e s 22e (mhz) mag. angle mag. angle mag. angle mag angle 500 0.536 -154 11.788 104.0 0.033 49.8 0.390 -46.8 1000 0.565 -177 6.309 87.5 0.046 55.7 0.284 -53.2 1500 0.579 170 4.350 77.0 0.062 57.7 0.270 -54.6 2000 0.592 160 3.368 68.6 0.077 59.3 0.237 -57.5 2500 0.612 151 2.798 60.1 0.093 58.0 0.226 -70.0 3000 0.630 142 2.390 52.6 0.108 56.5 0.243 -77.2 3500 0.660 134 2.156 45.4 0.126 54.4 0.231 -84.4 4000 0.691 125 1.984 37.2 0.141 52.6 0.223 -95.8 4500 0.719 117 1.809 28.4 0.155 50.9 0.240 -105.2 5000 0.760 109 1.697 21.3 0.173 48.5 0.229 -112.6 5500 0.803 101 1.594 13.8 0.192 46.0 0.229 -112.3 6000 0.844 92 1.540 6.0 0.210 44.2 0.258 -136.2 typical scattering parameters in the sot-23 package MP4T64533, v ce = 8 volts, i c = 7 ma frequency s 11e s 21e s 12e s 22e (mhz) mag. angle mag. angle mag. angle mag angle 500 0.421 -95 7.378 126.4 0.062 77.9 0.519 -36.3 1000 0.257 -149 4.384 118.9 0.100 97.9 0.402 -36.9 1500 0.232 -176 3.082 123.3 0.140 116.2 0.368 -39.6 2000 0.238 157 2.408 129.2 0.183 130.9 0.354 -44.7 2500 0.256 140 2.005 136.3 0.224 145.7 0.346 -51.6 3000 0.279 126 1.734 143.2 0.274 160.8 0.339 -58.8 3500 0.310 116 1.498 153.3 0.308 172.0 0.331 -68.5 4000 0.338 106 1.367 163.5 0.350 173.6 0.320 -80.1 4500 0.359 97 1.284 173.8 0.402 161.0 0.327 -90.6 MP4T64533, v ce = 8 volts, i c = 10 ma frequency s 11e s 21e s 12e s 22e (mhz) mag. angle mag. angle mag. angle mag angle 500 0.299 -116 8.385 119.4 0.057 82.1 0.451 -33.9 1000 0.216 -161 4.558 116.9 0.099 102.3 0.354 -33.2 1500 0.215 172 3.185 122.7 0.142 119.5 0.332 -37.7 2000 0.230 151 2.487 129.0 0.188 132.9 0.332 -44.0 2500 0.247 134 2.064 136.4 0.230 146.9 0.332 -50.1 3000 0.267 123 1.783 143.8 0.281 161.5 0.322 -56.1 3500 0.299 114 1.548 153.9 0.315 172.5 0.310 -66.4 4000 0.328 104 1.410 164.0 0.357 173.6 0.299 -79.2 4500 0.352 96 1.320 174.5 0.408 161.3 0.310 -90.1
silicon bipolar high f t low noise microwave transistors mp4t645 series specification subject to change without notice m-pulse microwave____________________________________________________________________________________ 5 576 charcot avemue, san jose, california 95131 tel (408) 432-1480 fax (408)) 432-3440 mp4t645 series typical performance curves nominal power derating curves 0 50 100 150 200 250 300 350 400 450 500 0 25 50 75 100 125 150 175 ambient temp (c) total power dissipation (mw) mp4t64500 chip on infinite heat sink mp4t64535 in micro-x package MP4T64533 in sot-23 package nominal gain vs frequency at v ce = 8 volts, i c = 10 ma (mp4t64535) 0 4 8 12 16 20 24 1 10 frequency (ghz) gain (db) gtu (max) |s 21e |2 2 5 nominal collector-base capacitance vs collector-base voltage (mp4t64535) 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 1 10 100 collector-base voltage (v cb ) (volts) collector-base capacitance (c cb ) (pf) nominal gain vs collector current at f = 1.5 ghz, v ce = 8 volts (mp4t64535) 6 7 8 9 10 11 12 13 14 15 1 10 100 collector current (ma) gain (db) gtu (max) |s 21e |2 mag
silicon bipolar high f t low noise microwave transistors mp4t645 series specification subject to change without notice m-pulse microwave____________________________________________________________________________________ 6 576 charcot avemue, san jose, california 95131 tel (408) 432-1480 fax (408)) 432-3440 typical performance curves (cont?d) nominal gain bandwidth product vs collector current (mp4t64535) 2 20 1 10 100 collector current (ma) gain bandwidth product (f t ) (ghz) nominal noise figure and associated gain vs frequency at v ce = 8 volts, collector current = 7 ma (mp4t64535) 1 10 100 0.1 1 10 frequency (ghz) noise associated figure(db) gain (db) noise figure associated gain nominal dc current gain vs collector current at v ce = 8 volts (mp4t64535) 10 100 1000 1 10 100 collector current (ma) dc current gain (h fe ) nominal noise figure and associated gain vs collector current at f = 1 ghz and v ce = 8 volts(mp4t64535) 1 3 5 7 9 11 13 0 5 10 15 20 collector current (ma) noise associated figure(db) gain (db) 50 ohm noise figure associated gain optimum match for noise figure
silicon bipolar high f t low noise microwave transistors mp4t645 series specification subject to change without notice m-pulse microwave____________________________________________________________________________________ 7 576 charcot avemue, san jose, california 95131 tel (408) 432-1480 fax (408)) 432-3440 typical performance curves (cont?d) nominal output power at the 1db compression point vs collector current at f = 1 and 4 ghz, v ce = 8 volts (mp4t64535) 6 8 10 12 14 16 18 20 22 24 0 10 20 30 40 collector current (ma) power out @ 1 db compression (dbm) p 1db at 4 ghz p 1db at 1 ghz case styles MP4T64533 sot-23 f d h j a g l c e b k n m collector emitter base MP4T64533 inches millimeters dim. min. max. min. max. a ? 0.044 ? 1.12 b ? 0.004 ? 0.10 c ? 0.040 ? 1.00 d 0.013 0.020 0.35 0.50 e 0.003 0.006 0.08 0.15 f 0.110 0.119 2.80 3.00 g 0.047 0.056 1.20 1.40 h 0.037 typical 0.95 typical j 0.075 typical 1.90 typical k ? 0.103 ? 2.60 l ? 0.024 ? 0.60 dim. gradient m 10 max. 1 n 2 . . . 30 note: 1. applicable on all sides
silicon bipolar high f t low noise microwave transistors mp4t645 series specification subject to change without notice m-pulse microwave____________________________________________________________________________________ 8 576 charcot avemue, san jose, california 95131 tel (408) 432-1480 fax (408)) 432-3440 case styles (cont?d) mp4t64535 micro-x collector emitter b e f 4 plcs. c g base h emitter d a mp4t64500 case style 00 (chip) base emitter d a c b e mp4t64539 case style sot-143 g j e k a h m c f b l p n collector emitter emitter base d mp4t64535 inches millimeters dim. min. max. min. max. a 0.092 0.108 2.34 2.74 b 0.079 0.087 2.01 2.21 c ? 0.070 ? 1.78 d 0.019 0.025 0.48 0.64 e 0.018 0.022 0.46 0.56 f 0.150 ? 3.81 ? g 0.003 0.006 0.08 0.15 h 45 45 mp4t64500 dim. inches millimeters a 0.013 0.325 b 0.013 0.325 c 0.004 0.110 d 0.0005 0.013 e (dia.) 0.0012 0.030 f (chip thickness) 0.0045 0.114 mp4t64539 inches millimeters dim. min. max. min. max. a ? 0.044 ? 1.10 b ? 0.004 ? 0.10 c ? 0.040 ? 1.00 d 0.013 0.020 0.35 0.50 e 0.030 0.035 0.75 0.90 f 0.003 0.006 0.08 0.15 g 0.110 0.119 2.80 3.00 h 0.047 0.056 1.20 1.40 j 0.075 typical 1.90 typical k 0.040 typical 1.70 typical l ? 0.103 ? 2.60 m ? 0.024 ? 0.60 dim. gradient n 10 max. 1 p 2 . . . 30 note: 1. applicable on all sides
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